Today it has been announced by Samsung that it had begun mass production of its 236-layer three-dimensional NAND memory, that the company brands as its 8th Generation V-NAND. The all-new ICs feature a 2400 Mbps transfer speed, and when combined with an advanced controller, they can let client-grade SSDs along with a transfer speed of over 12 Gbps.  

The new 8th Generation V-NAND device features a 1Tb capacity (128GB), which is called by Samsung the industry’s highest bit density without revealing the size of the IC or the actual density. The IC also features a 2400 Mbps data transfer rate, which is important for the best SSDs featuring a PCIe 5.0 x4 interface that will provide blazing 12.4 GBps once paired with a proper controller. 

Samsung claims that the new generation of its 3D NAND memory will offer a 20% higher per-wafer productivity compared to the existing flash ICs of the same capacity, it is something that lowers the costs of the company, which potentially refer to cheaper SSDs. 

The new 1Tb 3D TLC 8th Generation V-NAND of Samsung uses a quad-plane architecture in order to maximize parallelism and thus improve performance. 

According to SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics, as market demand for senser, greater capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology in order to reduce surface area and height, at the time of ignoring the cell-to-cell interference that normally occurs with scaling down. It is also said that their eighth-gen V-NAND will help meet rapidly growing market demand as well as will help in better positioning to deliver more products and solutions, that will be at the very foundation of future storage innovations. 

Samsung has not yet declared any actual products based on its 8th gen V-NAND memory, but still, we can assume that the first devices will cater to client applications.